Computer ARchitecture &
Embedded Systems Laboratory

> Research Area > Flash Memory System

Flash Memory System

1. LAST: Locality-Aware Sector Translation for NAND Flash Memory-Based Storage Systems

- Develop a flash translation layer (FTL) optimized for general purpose systems, such as desktop systems and enterprise systems

 

- Focus on minimizing the garbage collection overhead by exploiting the locality of I/O references (e.g., sequential locality and temporal locality)

 


 

 

2. RAST: Resource-Aware Sector Translation for NAND Flash Memory-Based Storage Systems

- Propose a novel flash translation layer (FTL), called Resource-Aware Sector Translation Layer (RAST), which is optimized to reduce the memory footprint of an FTL for resource-sensitive storage systems.

 

- Saves the memory footprint by using an on-demand metadata management scheme which brings only recently accessed metadata into memory.

 

- Employs a sampling-based wear-leveling scheme which provides competitive wear-leveling

 

- Achieve a good performance level for resource-constraint storage systems with the small memory footprint.

 

- Performance with very small memory.

 


 

 

3. Published papers

Sungjin Lee, Dongkun Shin, Young-Jin Kim and Jihong Kim, "LAST: Locality-Aware Sector Translation for NAND Flash Memory-Based Storage Systems ," ACM Operating Systems Review, Vol. 42, Issue 6, pp. 36-42, October 2008

Keonsoo Ha, Taejin Kim, Byoung Young Ahn, and Jihong Kim, "Resource-Aware Sector Translation Layer for Resource-Sensitive NAND flash-based Storage Systems ," IEEE Transactions on Consumer Electronics, Vol. 58, No. 2, May 2012